FDY4000CZ complementary n & p-channel powertrench ? mosfet ?2009 fairchild semiconductor corporation FDY4000CZ rev. b2 www.fairchildsemi.com 1 FDY4000CZ mosfet features q1: n-channel max r ds(on) 0.7 at v gs = 4.5v, i d = 600ma max r ds(on) 0.85 at v gs = 2.5v, i d = 500ma max r ds(on) 1.25 at v gs = 1.8v, i d =150 ma q2: p-channel max r ds(on) 1.2 at v gs = -4.5v, i d = -350ma max r ds(on) 1.6 at v gs = -2.5v, i d = -300ma max r ds(on) 2.7 at v gs = -1.8v, i d = -150ma esd protection diode (note 3) rohs compliant general description this complementary n & p-channel mosfet has been designed using fairchild semiconductors advanced power trench ? process to optimize the r ds(on) @ v gs = 2.5v and specify the r ds(on) @ v gs = 1.8v. applications level shifting power supply converter circuits load/power switching cell phones, pagers mosfet maximum ratings t c = 25c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter q1 q2 units v ds drain to source voltage 20 -20 v v gs gate to source voltage 12 8 v i d drain current -continuous (note 1a) 600 -350 ma -pulsed 1000 -1000 p d power dissipation (steady state) (note 1a) (note 1b) 625 mw 446 t j , t stg operating and storage jaunting temperature range -55 to 150 c r ja thermal resistance, junction to ambient (note 1a) 200 c/w r ja thermal resistance, junction to ambient (note 1b) 280 device marking device package reel size tape width quantity e FDY4000CZ sc89-6 7 8mm 3000units 1 2 3 4 5 6 s2 g1 d1 4 6 2 3 1 5 s1 g2 d2 complementary n & p-channel powertrench ? november 2009
FDY4000CZ complementary n & p-channel powertrench ? mosfet www.fairchildsemi.com 2 electrical characteristics t j = 25c unless otherwise noted off characteristics on characteristics (note 2) dynamic characteristics switching characteristics symbol parameter test condit ions type min typ max units b vdss drain to source breakdown volt- age i d = 250 a, v gs = 0v i d = -250 a, v gs = 0v q1 q2 20 -20 v b vdss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25c i d = -250 a, referenced to 25c q1 q2 15 -15 mv/ c i dss zero gate voltage drain current v ds = 16v, v ds =0v v ds = -16v, v ds =0v q1 q2 1 -3 a i gss gate-body leakage v gs = 12v, v ds = 0v v gs = 4.5v, v ds = 0v v gs = 8v, v ds = 0v q1 q1 q2 10 1 10 a v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 a v gs = v ds , i d = -250 a q1 q2 0.6 -0.6 1.0 -1.0 1.5 -1.5 v v gs(th) t j gate to source threshold voltage temperature coefficient i d = 250 a, referenced to 25c i d = -250 a, referenced to 25c q1 q2 -3 3 mv/c r ds(on) drain to source on resistance v gs = 4.5v, i d = 600ma v gs = 2.5v, i d = 500ma v gs = 1.8v, i d = 150ma, v gs = 4.5v, i d = 600ma,t j = 125c q1 0.30 0.40 0.80 0.35 0.70 0.85 1.25 1.00 v gs = -4.5v, i d = --350ma v gs = -2.5v, i d = -300ma v gs = -1.8v, i d = -150ma v gs = -4.5v, i d = -350ma, t j =125c q2 0.5 0.8 1.3 0.7 1.2 1.6 2.7 1.6 g fs forward transconductance v ds = 5v, i d = 600ma v ds = -5v, i d = -350ma q1 q2 1.8 1 s c iss input capacitance q1 v ds = 10v, v gs = 0v, f = 1mhz q2 v ds = -10v, v gs = 0v, f = 1mhz q1 q2 60 100 pf c oss output capacitance q1 q2 20 30 pf c rss reverse transfer capacitance q1 q2 10 15 pf t d(on) turn-on delay time q1 v dd = 10v, i d = 1a, v gs = 4.5v, r g = 6 q2 v dd = -10v, i d = -0.5a, v gs = -4.5v, r g = 6 q1 q2 6 6 12 12 ns t r rise time q1 q2 8 13 16 23 ns t d(off) turn-off delay time q1 q2 8 8 16 16 ns t f fall time q1 q2 2.4 1 4.8 2 ns q g total gate charge q1 v ds = 10v, i d = 600ma, v gs = 4.5v q2 v ds = -10v, i d = -350ma, v gs = -4.5v q1 q2 0.8 1.0 1.1 1.4 nc q gs gate to source gate charge q1 q2 0.16 0.2 nc q gd gate to drain millercharge q1 q2 0.26 0.3 nc ?2009 fairchild semiconductor corporation FDY4000CZ rev. b2
FDY4000CZ complementary n & p-channel powertrench ? mosfet www.fairchildsemi.com 3 electrical characteristics t j = 25c unless otherwise noted drain-source diode characteristics symbol parameter test conditions type min typ max units v sd source to drain diode forward voltage v gs = 0v, i s = 150ma (note 2) v gs = 0v, i s = -150ma (note 2) q1 q2 0.7 -0.8 1.2 -1.2 v t rr reverse recovery time q1 i f = 600ma, di/dt = 100a/ s q2 i f = -350ma, di/dt = 100a/ s q1 q2 8 11 ns q rr reverse recovery charge q1 q2 1 2 nc notes: 1: r ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the s older mounting surface of the drain pins. r jc is guaranteed by design while r ja is determined by the user's board design. 2: pulse test : pulse width < 300us, duty cycle < 2.0% 3: the diode connected between the gate and source serves only as protection against esd. no gate overvoltage rating is implied. a) 200c/w when mounted on a 1 in 2 pad of 2 oz copper b) 280c/w when mounted on a minimum pad of 2 oz copper scale 1:1 on letter size paper ?2009 fairchild semiconductor corporation FDY4000CZ rev. b2
FDY4000CZ complementary n & p-channel powertrench ? mosfet www.fairchildsemi.com 4 figure 1. 0 0.2 0.4 0.6 0.8 1 00.250.50.751 9 ' 6 ' 5 $ , 1 6 2 8 5 & ( 9 2 / 7 $ * ( 9 , ' ' 5 $ , 1 & 8 5 5 ( 1 7 $ 9 9 9 * 6 9 9 9 on-region characteristics figure 2. 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 0 0.2 0.4 0.6 0.8 1 , ' ' 5 $ , 1 & 8 5 5 ( 1 7 $ 5 ' 6 2 1 1 2 5 0 $ / , = ( ' ' 5 $ , 1 6 2 8 5 & ( 2 1 5 ( 6 , 6 7 $ 1 & ( 9 * 6 9 9 9 9 9 normalized on-resistance vs. drain current and gate voltage figure 3. 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 7 - - 8 1 & 7 , 2 1 7 ( 0 3 ( 5 $ 7 8 5 ( r & 5 ' 6 2 1 1 2 5 0 $ / , = ( ' ' 5 $ , 1 6 2 8 5 & ( 2 1 5 ( 6 , 6 7 $ 1 & ( , ' p $ 9 * 6 9 normalized on-resistance vs. temperature figure 4. 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1234 5 v gs , gate to source voltage (v) r ds(on) , on-resistance (ohm) i d = 300ma t a = 125 o c t a = 25 o c o n - r e s i s t a n c e v s . gate-to-source voltage figure 5. 0 0.3 0.6 0.9 1.2 1.5 0.5 1 1.5 2 2.5 3 v gs , gate to source voltage (v) i d , drain current (a) t a = -55 o c 25 o c 12 5 o c v ds = 5v transfer characteristics figure 6. source to 0.0001 0.001 0.01 0.1 1 00.20.40.60.811. 2 v sd , body diode forward voltage (v) i s , reverse drain current (a) t a = 125 o c 25 o c -55 o c v gs = 0v drain diode forward voltage vs. source cu rrent and temperature typical characteristics q1 (n-channel) ?2009 fairchild semiconductor corporation FDY4000CZ rev. b2
FDY4000CZ complementary n & p-channel powertrench ? mosfet www.fairchildsemi.com 5 figure 7. 0 1 2 3 4 5 00.20.40.60.81 4 j * $ 7 ( & + $ 5 * ( q & 9 * 6 * $ 7 ( 6 2 8 5 & ( 9 2 / 7 $ * ( 9 , ' p $ 9 ' 6 9 9 9 gate charge characteristics figure 8. capacitance vs. drain to source voltage 0 10 20 30 40 50 60 70 80 90 100 0 4 8 12162 0 9 ' 6 ' 5 $ , 1 7 2 6 2 8 5 & ( 9 2 / 7 $ * ( 9 & $ 3 $ & , 7 $ 1 & ( s ) & l v v & u v v & r v v i 0 + ] 9 * 6 9 figure 9. maximum safe operating area 0.01 0.1 1 10 0.1 1 10 10 0 v ds , drain-source voltage (v) i d , drain current (a) dc 10s 1s 100ms r ds(on) limit v gs = 4.5v single pulse r ja = 280 o c/w t a = 25 o c 10ms 1ms figure 10. single pulse maximum power dissipation 0 5 10 15 20 25 30 0.0001 0.001 0.01 0.1 1 10 100 100 0 t 1 , time (sec) p(pk), peak transient power (w) single pulse r ja = 280c/w t a = 25c figure 11. transient thermal response curve 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) r(t), normalized effective transient thermal resistance r ja (t) = r(t) * r ja r ja =280 c/w t j - t a = p * r ja (t) duty cycle, d = t 1 / t 2 p (p k ) t 1 t 2 single puls e d=0.5 0.2 0.1 0.05 0.02 0.01 thermal characterization performed using the conditions described in note 1b. transient thermal response will change depending on the circuit board design. typical characteristics q1 (n-channel) ?2009 fairchild semiconductor corporation FDY4000CZ rev. b2
FDY4000CZ complementary n & p-channel powertrench ? mosfet www.fairchildsemi.com 6 figure 12. 0 0.2 0.4 0.6 0.8 1 0 0.5 1 1.5 2 -v ds , drain to source voltage (v) -i d , drain current (a) v gs = -4.5v -3.0 v -1.8v -2.0v -2.5v -4.0 v on-region characteristics figure 13. 0.6 1 1.4 1.8 2.2 2.6 00.20.40.60.81 -i d , drain current (a) r ds(on) , normalized drain-source on-resistance v gs =-1.8v -3.0v -3.5 v -4.5v -2.0v -2.5v -4.0v normalized on-resistance vs. drain current and gate voltage figure 14. 0.6 0.8 1 1.2 1.4 1.6 -50-250 255075100125150 t j , junction temperature ( o c) r ds(on) , normalized drain-source on-resistance i d = -0.35a v gs = -4.5 v normalized on-resistance vs. temperature figure 15. 0.25 0.5 0.75 1 1.25 1.5 1.75 2 0246810 -v gs , gate to source voltage (v) r ds(on) , on-resistance (ohm) i d = -0.175a t a = 125 o c t a = 25 o c on-resistance vs. gate-to-source voltage figure 16. 0 0.2 0.4 0.6 0.8 1 0.511.522.5 -v gs , gate to source voltage (v) -i d , drain current (a) t a = 125 o c 25 o c -55 o c v ds = -5v transfer characteristics figure 17. 0.0001 0.001 0.01 0.1 1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -v sd , body diode forward voltage (v) -i s , reverse drain current (a) v gs = 0v t a = 125 o c 25 o c -55 o c source to drain diode forward voltage vs. source current and temperature typical characteristics q2 (p-channel) ?2009 fairchild semiconductor corporation FDY4000CZ rev. b2
FDY4000CZ complementary n & p-channel powertrench ? mosfet www.fairchildsemi.c om 7 figure 18. 0 2 4 6 8 10 00. 511.522.5 q g , ga te charge (nc) -v gs , g ate-source voltage (v) i d = -0.35a v ds = -5 v -15 v -10 v gate charge characteristics figure 19. 0 25 50 75 100 12 5 150 024681012 -v ds , dra in to source voltage (v) capaci tance (pf) c iss c oss c rss f = 1 mhz v gs = 0 v capacitance vs. drain to source voltage figure 20. 0.01 0. 1 1 10 0.01 0.1 1 10 100 -v ds , drain-source voltage (v) -i d , dr ain current (a) dc 1s 100ms 100 s r ds( on) limi t v gs = -4 .5v single pulse r ja = 2 80 o c/w t a = 2 5 o c 10ms 1ms 10s maximum safe operating area figure 21. 0 2 4 6 8 10 0.0001 0.001 0.01 0.1 1 10 100 t 1 , time (sec) p(pk), peak transient power (w) single pulse r ja = 280 , /w t a = 25 , dissipation figu re 22. 0.0 1 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , tim e (sec) r(t), no rmalized effective transien t thermal resistance r ja (t ) = r(t) * r ja r ja =280 , /w t j - t a = p * r ja (t) du ty cycle, d = t 1 / t 2 p (p k ) t 1 t 2 single pulse 0.0 1 0.02 0.0 5 0.1 0.2 d = 0. 5 transient the rmal response curve therma l characterization performed using the conditions described in note 1b. transient thermal response will change depending on the circuit board design. typical characteristics q2 (p-channel) ?2009 f airchild semiconductor corporation FDY4000CZ rev. b2 single pulse maximum power
FDY4000CZ complementary n & p-channel powertrench ? mosfet www.fairchildsemi.com 8 dimensional outline and pad layout land pattern recommendation detail a scale 2 : 1 0.10 0.00 top view bottom view 1.70 1.50 0.50 1.00 0.30 0.15 0.60 0.56 (0.20) 13 64 see detail a 1.80 0.30 1.25 0.50 0.50 0.55 1.20 bsc 0.20 bsc 0.35 bsc 0.18 0.10 0.1 c b a a b c 1.60 notes: a) this package conforms to eiaj sc89 packaging standard. b) all dimensions are in millimeters. c) drawing conforms to asme y14.5m-1994 d) dimensions are exclusive of burrs, mold flash, and tie bar extrusions. mad06areva ?2009 fairchild semiconductor corporation FDY4000CZ rev. b2
trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchilds worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchilds products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms accupower? auto-spm? build it now? coreplus? corepower? crossvolt ? ctl? current transfer logic? ecospark ? efficentmax? ezswitch?* ?* fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? fetbench? flashwriter ? * fps? f-pfs? frfet ? global power resource sm green fps? green fps? e-series? g max ? gto? intellimax? isoplanar? megabuck? microcoupler? microfet? micropak? millerdrive? motionmax? motion-spm? optologic ? optoplanar ? ? pdp spm? power-spm? powertrench ? powerxs? programmable active droop? qfet ? qs? quiet series? rapidconfigure? ? saving our world, 1mw /w /kw at a time? smartmax? smart start? spm ? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 supremos? syncfet? sync-lock? ?* the power franchise ? ? tinyboost? tinybuck? tinycalc? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? trifault detect? truecurrent?* uhc ? ultra frfet? unifet? vcx? visualmax? xs? tm ? t m t m datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product that is discontinued by fairchild semiconductor. the datasheet is for reference information only. anti-counterfeiting policy fairchild semiconductor corporations anti-counterfeiting policy. fairchilds anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in the industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of production and manufacturing delays. fairchild is taking strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. fairchild strongly encourages customers to purchase fairchild parts either directly from fa irchild or from authorized fairchild distributors who are listed by country on our web page cited above. products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fairchilds quality standards for handing and storage and provide access to fairchilds full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. rev. i41 ?2009 fairchild semiconductor corporation FDY4000CZ rev. b2 www.fairchildsemi.com 9
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